Movpe Growth and Properties of Gap Using Nitrogen Bridged Adduct
Amongst the new precursors for the III component in MOVPE there are numerous nitrogen containing compounds. Using those compounds, besides the electrical and optical quality of the grown material, the question of incorporation of nitrogen arises. We present the results of GaP growth with the TMGa-TMN adduct. Photoluminscence at 2 K clearly detects nitrogen as a substitutional dopant. Considering the luminescence features the nitrogen concentration was estimated to be about 10(16)-10(17) cm-3. The residual carrier concentration of the layers is in the range of 10(15) cm-3. No oxygen-related emission was observed. A discussion of the growth and the properties of the material is given.
WOS:A1992HK15200020
1992
118
1-2
176
182
Ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Keller, bp, karl marx univ,sekt chem & phys,linnestr 3-5,o-7010 leipzig,germany.
ISI Document Delivery No.: HK152
Cited Reference Count: 23
Cited References:
1987, LANDOLTBORNSTEIN NUM
BASS SJ, 1986, J CRYST GROWTH, V75, P221
BENEKING H, 1981, J CRYST GROWTH, V55, P79
BIEFELD RM, 1982, J CRYST GROWTH, V56, P382
BINDEMANN R, 1973, PHYS STATUS SOLIDI B, V56, P563
BINDEMANN R, 1974, PHYS STATUS SOLIDI B, V66, P133
CARTER AG, 1939, J CHEM SOC 1, P495
COHEN E, 1977, PHYS REV B, V15, P1039
DEAN PJ, 1967, J APPL PHYS, V38, P3351
HANSEL T, 1979, CRYST RES TECHNOL, V14, P977
KELLER BP, 1991, CRYST RES TECHNOL, V26, P253
KOPYLOV AA, 1977, FIZ TEKH POLUPROV, V11, P867
KUECH TF, 1984, J CRYST GROWTH, V68, P148
LEYS MR, 1989, J ELECT MAT, V18, P25
RIEDE V, 1986, PHYS STATUS SOLIDI A, V93, K151
ROBERTS JS, 1990, J CRYST GROWTH, V104, P857
SCHWABE R, 1979, PHYS STATUS SOLIDI B, V95, P571
SCHWETLICK S, 1989, J CRYST GROWTH, V89, P378
SEIFERT W, 1985, CRYST RES TECHNOL, V20, P625
SEIFERT W, 1989, CRYST RES TECHNOL, V24, P29
STRINGFELLOW GB, 1972, J ELECTROCHEM SOC, V119, P1780
THOMAS DG, 1966, PHYS REV, V150, P680
WOLFRAM P, 1989, J CRYST GROWTH, V96, P691
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