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conference paper
A 35mW 8 b 8.8 GS/s SAR ADC with Low-Power Capacitive Reference Buffers in 32nm Digital SOI CMOS
2013
Proceedings of the 2013 Symposium on VLSI Circuits
An asynchronous 8x interleaved redundant SAR ADC achieving 8.8GS/s at 35mW and 1V supply is presented. The ADC features pass-gate clocking for time-skew minimization and per-channel gain control based on low-power reference voltage buffers. The sub-ADC stacks the capacitive SAR DAC (CDAC) with the reference capacitor to reduce the area and enhance the settling speed. It achieves 38.5dB SNDR and 58fJ/conversion-step with a core chip area of 0.025mm2 in 32nm CMOS SOI technology.
Type
conference paper
Authors
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Schmatz, Martin
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Francese, P. A.
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Menolfi, C.
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Braendli, M.
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Kossel, M.
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Morf, T.
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Meyer Andersen, T.
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Publication date
2013
Published in
Proceedings of the 2013 Symposium on VLSI Circuits
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
Kyoto, Japan | June 11-14, 2013 | |
Available on Infoscience
March 12, 2013
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