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  4. Modeling study of capacitance and gate current in strained HighK-Metal gate technology
 
conference paper not in proceedings

Modeling study of capacitance and gate current in strained HighK-Metal gate technology

Garetto, Davide  
•
Rideau, Denis
•
Dornel, Erwan
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2010
13th International Nanotech Conference
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Type
conference paper not in proceedings
Author(s)
Garetto, Davide  
Rideau, Denis
Dornel, Erwan
Clark, William F.
Tavernier, Clement
Leblebici, Yusuf  
Schmid, Alexandre  
Jaouen, Hervé
Date Issued

2010

Publisher

NSTI

Written at

EPFL

EPFL units
LSM  
Event nameEvent date
13th International Nanotech Conference

2010

Available on Infoscience
October 31, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/72116
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