conference paper

Alignment of defect energy levels at the Si-SIO2 interface from hybrid density functional calculations

Alkauskas, A.
•
Broqvist, P.  
•
Pasquarello, Alfredo  orcid-logo
2010
AIP Conference Proceedings
29th International Conference on the Physics of Semiconductors (ICPS)
Type
conference paper
DOI
10.1063/1.3295562
Web of Science ID

WOS:000281590800037

Author(s)
Alkauskas, A.
Broqvist, P.  
Pasquarello, Alfredo  orcid-logo
Date Issued

2010

Published in
AIP Conference Proceedings
Volume

1199

Start page

79

Subjects

defects

•

energy levels

•

oxide

•

hybrid density functionals

•

Silicon Dioxide

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
CSEA  
Event nameEvent date
29th International Conference on the Physics of Semiconductors (ICPS)

27 July–1 August 2009

Available on Infoscience
October 14, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/43687