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conference paper
Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope
2016
2016 IEEE Silicon Nanoelectronics Workshop (SNW)
We report a thorough investigation of the electrically-induced metal-insulator transition in vanadium dioxide (VO2) for abrupt switching in 2-terminal devices (0.24 mV/dec at 25 °C, 0.38 mV/dec at 50 °C). We exploit the electrothermal actuation model based on Joule heating to model and predict the low temperature dependence of the slope in VO2 switches.
Type
conference paper
Web of Science ID
WOS:000391250500079
Publication date
2016
Publisher
Publisher place
New York
Published in
2016 IEEE Silicon Nanoelectronics Workshop (SNW)
Total of pages
2
Start page
180
End page
181
Peer reviewed
REVIEWED
Written at
EPFL
| Event name | Event place | Event date |
Honolulu, HI, USA | 12-13 June 2016 | |
Available on Infoscience
October 14, 2016
Use this identifier to reference this record