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conference paper

Ultra low power: Emerging devices and their benefits for integrated circuits

Ionescu, Adrian M.  
•
De Michielis, Luca  
•
Dagtekin, Nilay
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2011
2011 International Electron Devices Meeting
2011 IEEE International Electron Devices Meeting (IEDM)

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative Capacitance (NC) FETs and evaluate their potential advantages for digital and analog design, compared to CMOS. Second, we investigate the combined low power and novel integrated functionality in some hybrid Nano-Electro-Mechanical (NEM) devices: the Resonant Body (RB) Fin FET for nW time reference ICs and dense arrays of Suspended Body (SB) Double Gate (DG) Carbon Nanotube (CNT) FET for low power analog/RF and integrated sensor arrays.

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Type
conference paper
DOI
10.1109/IEDM.2011.6131563
Web of Science ID

WOS:000300015300095

Author(s)
Ionescu, Adrian M.  
•
De Michielis, Luca  
•
Dagtekin, Nilay
•
Salvatore, Giovanni
•
Cao, Ji
•
Rusu, Alexandru  
•
Bartsch, Sebastian  
Date Issued

2011

Publisher

IEEE

Published in
2011 International Electron Devices Meeting
Start page

16.1.1

End page

16.1.4

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Event nameEvent placeEvent date
2011 IEEE International Electron Devices Meeting (IEDM)

Washington, DC, USA

5-7 December 2011

Available on Infoscience
March 6, 2012
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/78453
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