Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector
In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of light. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this technique flux densities as low as 2mW/m2 were measured. © 2007 IEEE.
WOS:000252831900082
2-s2.0-39549115003
2008
366
369
Electrical Engineering, Ecole Polytechnique Federal de Lausanne, Lausanne, Switzerland
Export Date: 19 January 2010
Source: Scopus
Art. No.: 4430954
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