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  4. Post-cmos processing and 3d integration based on dry-film lithography
 
patent

Post-cmos processing and 3d integration based on dry-film lithography

Guiducci, Carlotta  
•
Leblebici, Yusuf
•
Temiz, Yuksel  
2015

A method for performing a post processing pattern on a diced chip having a foot-print, comprises the steps of providing a support wafer; applying a first dry film photoresist to the support wafer; positioning a mask corresponding to the footprint of the diced chip on the first dry film photoresist; expose the mask and the first dry film photoresist to UV radiation; remove the mask; photoresist develop the exposed first dry film photoresist to obtain a cavity corresponding to the diced chip; positioning the diced chip inside the cavity; applying a second dry film photoresist to the first film photoresist and the diced chip; and expose and develop the second dry film photoresist applied to the diced chip in accordance with the post processing pattern.

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Type
patent
EPO Family ID

49253366

Author(s)
Guiducci, Carlotta  
Leblebici, Yusuf
Temiz, Yuksel  
TTO classification

TTO:6.1216

EPFL units
AVP-R-TTO  
CLSE  
IdentifierCountry codeKind codeDate issued

US9412728

US

B2

2016-08-09

US2015371978

US

A1

2015-12-24

WO2014020479

WO

A3

2014-04-10

WO2014020479

WO

A2

2014-02-06

Available on Infoscience
May 24, 2017
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/137545
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