research article
Surface morphology of AlN and size dispersion of GaN quantum dots
The influence of the basic growth parameters (growth temperature, V/III ratio and growth rate) on the surface morphology of AIN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrate is reported. Optimized-growth conditions lead to a significant decrease of the surface roughness. The use of such surfaces as template to grow GaN quantum dots is shown to improve their size dispersion. (C) 2004 Elsevier B.V. All rights reserved.
Type
research article
Author(s)
Date Issued
2005
Published in
Volume
274
Issue
3-4
Start page
387
End page
393
Editorial or Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
Available on Infoscience
October 5, 2010
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