Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Conferences, Workshops, Symposiums, and Seminars
  4. A 90GS/s 8b 667mW 64x Interleaved SAR ADC in 32nm Digital SOI CMOS
 
conference paper

A 90GS/s 8b 667mW 64x Interleaved SAR ADC in 32nm Digital SOI CMOS

Kull, Lukas  
•
Toifl, T.
•
Schmatz, M.
Show more
2014
Proceedings of the 2014 International Solid-State Circuits Conference (ISSCC)
2014 International Solid-State Circuits Conference (ISSCC)

A 90GS/s 8b low-power ADC is presented achieving 33.0-36.0dB SNDR and a FoM of 203fJ/conversion-step. High conversion speed of up to 100GS/s and high input bandwidth of 22GHz is achieved by using a 1:64 interleaver with integrated sampling. Single NMOS transistors followed by 1:4 demux stages are used to sample the signal. Skew and gain adjustment is implemented on-chip. The ADC consumes 667mW at 90GS/s and 845mW at 100GS/s and can be operated from a single supply voltage. It is implemented in 32nm SOI CMOS and occupies 0.45mm2.

  • Details
  • Metrics
Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés