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conference paper
A 90GS/s 8b 667mW 64x Interleaved SAR ADC in 32nm Digital SOI CMOS
2014
Proceedings of the 2014 International Solid-State Circuits Conference (ISSCC)
A 90GS/s 8b low-power ADC is presented achieving 33.0-36.0dB SNDR and a FoM of 203fJ/conversion-step. High conversion speed of up to 100GS/s and high input bandwidth of 22GHz is achieved by using a 1:64 interleaver with integrated sampling. Single NMOS transistors followed by 1:4 demux stages are used to sample the signal. Skew and gain adjustment is implemented on-chip. The ADC consumes 667mW at 90GS/s and 845mW at 100GS/s and can be operated from a single supply voltage. It is implemented in 32nm SOI CMOS and occupies 0.45mm2.
Type
conference paper
Authors
•
Toifl, T.
•
Schmatz, M.
•
Francese, P. A.
•
Menolfi, C.
•
Braendli, M.
•
Kossel, M.
•
Morf, T.
•
Meyer Anderson, T.
•
Publication date
2014
Published in
Proceedings of the 2014 International Solid-State Circuits Conference (ISSCC)
Subjects
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
San Francisco, California | February 9-13, 2014 | |
Available on Infoscience
November 26, 2013
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