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research article

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Glauser, Marlene  
•
Mounir, Christian
•
Rossbach, Georg  
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2014
Journal Of Applied Physics

Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadening issue can prevent a microcavity (MC) system entering into the strong light-matter coupling regime (SCR). The impact of excitonic disorder in low indium content (x similar to 0.1) InxGa1-xN/GaN MQW active regions is therefore investigated for the subsequent realization of polariton laser diodes by considering both simulations and optical characterizations. It allows deriving the requirements for such MQWs in terms of absorption, emission linewidth, and Stokes shift. Systematic absorption-like and photoluminescence (PL) spectroscopy experiments are performed on single and multiple In0.1Ga0.9N/GaN quantum wells (QWs). Micro-PL mappings reveal a low temperature PL linewidth of similar to 30 meV, compatible with SCR requirements, for single QWs for which the microscopic origin responsible for this broadening is qualitatively discussed. When stacking several InGaN/GaN QWs, a departure from such a narrow linewidth value and an increase in the Stokes shift are observed. Various possible reasons for this degradation such as inhomogeneous built-in field distribution among the QWs are then identified. An alternative solution for the MC design to achieve the SCR with the InGaN alloy is briefly discussed. (C) 2014 AIP Publishing LLC.

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Type
research article
DOI
10.1063/1.4883958
Web of Science ID

WOS:000338106000019

Author(s)
Glauser, Marlene  
•
Mounir, Christian
•
Rossbach, Georg  
•
Feltin, Eric
•
Carlin, Jean-Francois  
•
Butte, Raphael  
•
Grandjean, Nicolas  
Date Issued

2014

Publisher

Amer Inst Physics

Published in
Journal Of Applied Physics
Volume

115

Issue

23

Article Number

233511

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Available on Infoscience
August 29, 2014
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/106419
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