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conference paper

Multi-gate vibrating-body field effect transistor (VB-FETs)

Grogg, D.
•
Mazza, M.  
•
Tsamados, D.
Show more
2008
Electron Devices Meeting, 2008. IEDM 2008. IEEE International

This paper reports on the design, fabrication and detailed characteristics of multi-gate vibrating-body field effect transistors (VB-FETs). Double-gate and four-gate VB-FETs with resonance frequencies of 2 MHz and 71 MHz, respectively, are successfully demonstrated. The VB-FETs exhibit built-in amplification (more than +30 dB improvement of signal detection compared with capacitive detection), low motional resistances (in the orders kOhms down to tens of Ohms) and frequency tuning by applied voltages. For the first time, we experimentally demonstrate an active MEM resonator concept, with built-in amplification, which has a negative resistance of -30 Ohms, enabling the possibility to build an oscillator without any sustaining amplifier, thus reducing the power consumption and oscillator size. Also for the first time, we demonstrate a VB-FET mixer-filter based on a single-device operating at 9.84 MHz and a VB-FET oscillator at 2.6 MHz.

  • Details
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Type
conference paper
DOI
10.1109/IEDM.2008.4796781
Web of Science ID

WOS:000265829300154

Author(s)
Grogg, D.
•
Mazza, M.  
•
Tsamados, D.
•
Ionescu, A. M.  
Date Issued

2008

Published in
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Start page

1

End page

4

Subjects

field effect transistors

•

micromechanical resonators

•

semiconductor device manufacture

•

VB-FET mixer-filter

•

VB-FET oscillator

•

active MEM resonator

•

built-in amplification

•

frequency 2 MHz

•

frequency 2.6 MHz

•

frequency 71 MHz

•

frequency 9.84 MHz

•

frequency tuning

•

vibrating-body field effect transistor

Editorial or Peer reviewed

REVIEWED

Written at

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Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/41327
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