research article
Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities
Type
research article
Author(s)
Padilla, JL
Medina-Bailon, C
Navarro, C
Alper, C
Gamiz, F
Ionescu, AM
Date Issued
2018
Published in
Volume
65
Issue
1
Start page
339
End page
346
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
November 8, 2018
Use this identifier to reference this record