Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities

Padilla, JL; Medina-Bailon, C; Navarro, C; Alper, C; Gamiz, F; Ionescu, AM

doi:10.1109/TED.2017.2777666

research article

Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities

Padilla, JL

•

Medina-Bailon, C

•

Navarro, C

more

2018

IEEE TRANSACTIONS ON ELECTRON DEVICES

Type

research article

DOI

10.1109/TED.2017.2777666

Authors

Padilla, JL

•

Medina-Bailon, C

•

Navarro, C

•

Alper, C

•

Gamiz, F

•

Ionescu, AM

Publication date

2018

Published in

IEEE TRANSACTIONS ON ELECTRON DEVICES

Volume

65

Issue

1

Start page

339

End page

346

Peer reviewed

REVIEWED

EPFL units

NANOLAB

Available on Infoscience

November 8, 2018

Use this identifier to reference this record

https://infoscience.epfl.ch/handle/20.500.14299/149861