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  4. Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing
 
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conference paper

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Rupakula, Maneesha  
•
Zhang, Junrui  
•
Bellando, Francesco  
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January 1, 2019
49Th European Solid-State Device Research Conference (Essderc 2019)
49th European Solid-State Device Research Conference (ESSDERC)

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surface accumulation layer yielding good ohmic contacts thus making it an interesting choice for chemical and biological sensing platforms. Template Assisted Selective Epitaxy (TASE) enables the integration of III-V highly scaled devices, monolithically integrated on Silicon, within a fully CMOS compatible fabrication scheme hence without any catalyst-induced growth. With a new geometry, High-aspect-ratio (HAR) InAs fins and a new application of pH sensing the versatility of TASE is exhibited. HAR InAs fins, fin height to fin width in excess of 4 for fin width down to 30nm are fabricated on a Si substrate. The HAR InAs-on-insulator fins are characterized as pH sensors. A sensitivity of 38.8mV per pH is extracted at 6 microampere drain current from a 40nm wide 20 multi-finger array.

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Type
conference paper
DOI
10.1109/ESSDERC.2019.8901739
Web of Science ID

WOS:000520409500027

Author(s)
Rupakula, Maneesha  
•
Zhang, Junrui  
•
Bellando, Francesco  
•
Wildhaber, Fabien
•
Convertino, Clarissa
•
Schmid, Heinz
•
Moselund, Kirsten  
•
Ionescu, Adrian Mihai  
Date Issued

2019-01-01

Publisher

IEEE

Publisher place

New York

Published in
49Th European Solid-State Device Research Conference (Essderc 2019)
ISBN of the book

978-1-7281-1539-9

Series title/Series vol.

Proceedings of the European Solid-State Device Research Conference

Start page

106

End page

109

Subjects

Engineering, Electrical & Electronic

•

Engineering

•

iii-v

•

high-aspect ratio

•

finfet

•

inas

•

isfet

•

ph sensor

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Event nameEvent placeEvent date
49th European Solid-State Device Research Conference (ESSDERC)

Cracow, POLAND

Sep 23-26, 2019

Available on Infoscience
April 8, 2020
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/168029
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