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  4. Photoemission study of a single GaAlAs/GaAs/GaAlAs quantum well
 
conference paper

Photoemission study of a single GaAlAs/GaAs/GaAlAs quantum well

Houdré, R.
•
Hermann, C.
•
Lampel, G.
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1985
International Conference on the Formation of Semiconductor Interfaces
  • Details
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Type
conference paper
DOI
10.1016/0039-6028(86)90883-6
Author(s)
Houdré, R.
Hermann, C.
Lampel, G.
Frijlink, P. M.
Date Issued

1985

Published in
International Conference on the Formation of Semiconductor Interfaces
Series title/Series vol.

Surface Science; 168

Start page

538

End page

545

Note

invited communication

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOEQ  
SCI-SB-RH  
Available on Infoscience
August 31, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/10961
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