Influence of Al Content in the Barrier on the Optical-Properties of Gaas/Alxga1-Xas(X=0.1-1) Multiple-Quantum-Well Structures
GaAs/AlxGa1-xAs multiple-quantum-well structures with identical well thicknesses (almost-equal-to 119 angstrom) but with different Al contents x in the barrier (x almost-equal-to 0. 1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy. We report the characterization of the structures by a combination of different techniques. The x-ray-diffraction technique allows us to estimate the Al content x and to measure the period of the structure with good accuracy. Using the photographs given by high-resolution transmission electron microscopy on cleaved wedges, we investigate directly the key parameters of the structures, such as the regularity, the layer thickness, and the Al content x. The photoluminescence measurements carried out in detail from 4 K to room temperature show the excitonic character of the radiative recombination in these structures up to room temperature. The influence of x on the photoluminescence is investigated systematically. The data confirm the theoretical results calculated using finite barrier heights. The increase of transition energies with increasing x is due to the increase of confinement energies and exciton binding energies. A good agreement of the structure parameter values obtained by the above techniques is given.
WOS:A1992JN82600033
1992
46
11
6947
6954
Ky, nh, swiss fed inst technol,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: JN826
Cited Reference Count: 37
Cited References:
ADACHI S, 1985, J APPL PHYS, V58, R1
ALTARELLI M, 1988, EXCITONS CONFINED SY, P181
ANDREANI LC, 1990, PHYS REV B, V42, P8928
BASTARD G, 1988, WAVE MECHANICS APPL, P93
BAUMBACH GT, 1992, SEMICOND SCI TECH, V7, P304
BOSIO C, 1988, PHYS REV B, V38, P3263
BUFFAT PA, 1990, EVALUATION ADV SEMIC, P319
CHANG YC, 1988, EXCITIONS CONFINED S, P189
CHEMLA DS, 1984, IEEE J QUANTUM ELECT, V20, P265
CHEN Y, 1988, NUOVO CIMENTO D, V10, P847
CHUU DS, 1991, PHYS REV B, V43, P14504
CINGOLANI R, 1988, EUROPHYS LETT, V6, P169
COLOCCI M, 1990, J APPL PHYS, V68, P2809
DAWSON P, 1983, PHYS REV B, V28, P7381
DEVEAUD B, 1984, APPL PHYS LETT, V45, P1078
FAIST J, 1989, J APPL PHYS, V66, P1023
FOUQUET JE, 1985, APPL PHYS LETT, V46, P280
FUJIWARA K, 1988, APPL PHYS LETT, V253, P675
GOORSKY MS, 1991, APPL PHYS LETT, V59, P2269
GREENE RL, 1984, PHYS REV B, V29, P1807
HERMAN MA, 1991, J APPL PHYS, V70, R1
ISHIBASHI T, 1981, JPN J APPL PHYS, V20, L623
KAKIBAYASHI H, 1985, JPN J APPL PHYS, V24, L905
LEE J, 1986, PHYS REV B, V33, P5512
MAAN JC, 1984, PHYS REV B, V30, P2253
MILLER RC, 1985, J LUMIN, V30, P520
NELSON DF, 1987, PHYS REV B, V36, P8063
OKAMOTO H, 1987, JPN J APPL PHYS 1, V26, P315
OSSART P, 1991, JPN J APPL PHYS PT 2, V30, L783
OUGAZZADEN A, 1991, J CRYST GROWTH, V107, P761
PAVESI L, 1990, PROPERTIES GALLIUM A, P529
REYNOLDS DC, 1986, PHYS REV B, V33, P5931
ROGERS DC, 1986, PHYS REV B, V34, P4002
SINGH J, 1985, J VAC SCI TECHNOL B, V3, P520
TANAKA M, 1986, JPN J APPL PHYS PT 2, V25, L155
TANNER BK, 1991, APPL PHYS LETT, V59, P2272
XU ZY, 1987, SOLID STATE COMMUN, V61, P707
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