Bistable Switching in a Nonlinear Bragg Reflector
Numerical simulations and experimental results are reported on bistable switching in a semiconductor nonlinear vertical Bragg reflector. An improved structure with an additional linear rear mirror and a phase-adjusting layer was predicted to have lower threshold for bistability than a Fabry-Perot type device. The experimental observation of bistable switching in a nonlinear Bragg reflector is reported. Achieved threshold was comparable with a nonlinear Fabry-Perot device; the simpler structure of a nonlinear Bragg device may represent an advantage with respect to growth tolerances.
WOS:A1993MC05000005
1993
63
16
2177
2179
Tech univ nova scotia,dept elect engn,halifax b3j 2x4,ns,canada. swiss fed inst technol,inst micro & optoelectr,ch-1015 lausanne,switzerland. Acklin, b, univ neuchatel,inst microtechnol,ch-2000 neuchatel,switzerland.
ISI Document Delivery No.: MC050
Cited Reference Count: 8
Cited References:
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REVIEWED
EPFL