Bringing the Heat Sink Closer to the Heat: Evaluating Die-embedded Microchannel Cooling of GaN-on-Si Power Devices
With reducing transistor sizes and increasing levels of integration, extracting the heat from electronic devices is an ongoing challenge. Conventional indirect-cooling approaches are hindered by thermal interfaces, as well as heat spreading to larger areas which prevents dense integration. This work presents cooling strategies with microchannels directly embedded inside GaN-based semiconductor dies to extract higher heat fluxes, as well as substantially reduce pumping power. An experimental comparison is made between three levels of microchannel cooling: Indirect, using a thermal interface; direct embedded in the backside of the die; and co-designed, where the cooling channels are fundamentally integrated in the design of the electronic device. We show that, by having a cooling-centered device design, heat fluxes exceeding 1.75 kW/cm2 can be extracted with very high efficiency. Finally, to complement the compact cooling system, we discuss approaches for coolant delivery, and show how a new PCB-based coolant distribution can be used to obtain very-compact power converters, that may support the electrification of our society in the future.
WOS:001353847900001
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
2020-01-01
NEW YORK
978-1-7281-7643-7
International Workshop on Thermal Investigation of ICs and Systems
2474-1515
18
24
REVIEWED
EPFL
| Event name | Event acronym | Event place | Event date |
ELECTR NETWORK | 2020-09-14 - 2020-10-09 | ||