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  4. Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements
 
conference paper

Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements

Ecoffey, S.  
•
Pott, V.  
•
Bouvet, D.  
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2005
Digest of Technical Papers of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS '05)
13th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS '05)
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Type
conference paper
DOI
10.1109/SENSOR.2005.1496553
Web of Science ID

WOS:000232189100210

Author(s)
Ecoffey, S.  
Pott, V.  
Bouvet, D.  
Leblebici, Y.  
Declercq, M. J.  
Ionescu, A. M.  
Date Issued

2005

Published in
Digest of Technical Papers of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS '05)
Volume

1

Start page

859

End page

862

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
LSM  
Event nameEvent placeEvent date
13th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS '05)

Seoul, Korea

June 5-9

Available on Infoscience
December 6, 2005
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/220813
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