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  4. Evidence of Smaller 1/F Noise in AlScN-Based Oscillators Compared to AlN-Based Oscillators
 
research article

Evidence of Smaller 1/F Noise in AlScN-Based Oscillators Compared to AlN-Based Oscillators

Lozzi, Andrea  
•
Liffredo, Marco  
•
Yen, Ernest Ting-Ta
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June 1, 2020
Journal of Microelectromechanical Systems

In this paper we investigate the direct effect of resonator quality factor (Q) on the oscillator phase noise. We use 2-port contour mode resonators (CMRs), fabricated both with aluminum nitride (AlN) and aluminum scandium nitride (AlScN), as the frequency-determining element in the oscillator circuit. Over 70 oscillator configurations are tested using resonators with different Q and with different piezoelectric layer. The testing of so many devices is possible because, in our setup, interfacing the circuit to the resonator is streamlined using RF probes. Our results show that higher resonator Q yields better frequency stability of the oscillator, for both AlN and AlScN CMRs. Interestingly, the comparison between AlN-based oscillators and AlScN-based oscillators with equal Q shows that AlScN-based oscillators' Phase Noise is up 10 dBc/Hz better than the AlN oscillator at 1 kHz offset frequency, suggesting different intrinsic resonator flicker noise of the two piezoelectric layers. [2019-0200]

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Type
research article
DOI
10.1109/JMEMS.2020.2988354
Web of Science ID

WOS:000543148100004

Author(s)
Lozzi, Andrea  
Liffredo, Marco  
Yen, Ernest Ting-Ta
Segovia-Fernandez, Jeronimo
Villanueva, Luis Guillermo  
Date Issued

2020-06-01

Publisher

Institute of Electrical and Electronics Engineers

Published in
Journal of Microelectromechanical Systems
Volume

29

Issue

3

Start page

306

End page

312

Subjects

Engineering, Electrical & Electronic

•

Nanoscience & Nanotechnology

•

Instruments & Instrumentation

•

Physics, Applied

•

Engineering

•

Science & Technology - Other Topics

•

Instruments & Instrumentation

•

Physics

•

oscillators

•

resonant frequency

•

aluminum nitride

•

iii-v semiconductor materials

•

radio frequency

•

frequency measurement

•

frequency control

•

oscillator

•

phase noise

•

aluminum nitride

•

aluminum scandium nitride

•

contour mode resonators

•

phase-noise

•

mems

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

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July 10, 2020
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/169961
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