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  4. InAsP quantum wells for low threshold and high efficiency multi-quantum well laser diodes emitting at 1.55 mu m
 
conference paper

InAsP quantum wells for low threshold and high efficiency multi-quantum well laser diodes emitting at 1.55 mu m

Syrbu, A. V.
•
Berseth, C. A.
•
Behrend, J.
Show more
1997
1997 International Conference On Indium Phosphide And Related Materials - Conference Proceedings
1997 International Conference on Indium Phosphide and Related Materials (IPRM 97)

We report the first successful use, to our knowledge, of InAsP quantum wells for 1.55 mu m wavelength laser emission: 5 quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm(-1) losses per well, and 33 A/cm(2) transparency current density per well, which equal or even surpass the best published characteristics for 1.55 mu m wavelength lasers based on any material system. Strain relaxation issues do not severely limit the multi-quantum-well design since up to 17 quantum wells were integrated in a strain-balanced laser which showed equally good characteristics.

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Type
conference paper
DOI
10.1109/ICIPRM.1997.600229
Author(s)
Syrbu, A. V.
Berseth, C. A.
Behrend, J.
Rudra, A.
Kapon, E.
Carlin, J. F.  
Date Issued

1997

Publisher

Ieee

Published in
1997 International Conference On Indium Phosphide And Related Materials - Conference Proceedings
Start page

563

End page

566

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Event nameEvent placeEvent date
1997 International Conference on Indium Phosphide and Related Materials (IPRM 97)

HYANNIS, MA

May 11-15, 1997

Available on Infoscience
October 13, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55445
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