conference paper
A polarization insensitive erbium-doped waveguide amplifier
2025
CLEO 2025 Proceedings
We demonstrated a polarization-insensitive erbium doped silicon nitride amplifier based on a polarization equalizer. Off-chip net gain of 12 dB and < 0.5 dB polarization dependence is achieved with a -8.3 dBm input signal power at 1550 nm.
Type
conference paper
Author(s)
École Polytechnique Fédérale de Lausanne
Liu, Yang
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
Date Issued
2025
Publisher
Publisher place
Washington, D.C.
Published in
CLEO 2025 Proceedings
ISBN of the book
978-1-957171-50-0
Article Number
SS187_8
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
| Event name | Event acronym | Event place | Event date |
CLEO 2025 | Long Beach, CA, US | 2025-05-04 - 2025-05-09 | |
Available on Infoscience
September 30, 2025
Use this identifier to reference this record