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  4. Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
 
research article

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

Butte, R
•
Lahourcade, L
•
Uzdavinys, TK
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2018
Applied Physics Letters
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Type
research article
DOI
10.1063/1.5010879
Web of Science ID

WOS:000423027300027

Author(s)
Butte, R
Lahourcade, L
Uzdavinys, TK
Callsen, G
Mensi, M
Glauser, M
Rossbach, G
Martin, D
Carlin, JF
Marcinkevicius, S
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Date Issued

2018

Publisher

AIP American Institute of Physics

Published in
Applied Physics Letters
Volume

112

Issue

3

Article Number

032106

Note

This is an open access article under the terms of the Creative Commons Attribution License

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Available on Infoscience
November 8, 2018
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/150717
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