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2006
Proceedings of the 36th European Solid-State Devices Research Conference
Double gate tunnel FET with ultrathin silicon body and high-k dielectric
conference paper
Type
conference paper
Author(s)
Date Issued
2006
Journal
Proceedings of the 36th European Solid-State Devices Research Conference
Start page
383
End page
386
Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
| Event name |
Available on Infoscience
May 16, 2007
Use this identifier to reference this record