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research article
Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors
Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm, is achieved. The reversibility of the CNTFET sensors is also found to be significantly improved under the appropriate positive gate voltages. In this study, an in-depth understanding of how the electrical properties of the CNTFETs are affected by NH3 gas is gained. (C) 2008 Elsevier B.V. All rights reserved.
Type
research article
Authors
Publication date
2008
Published in
Volume
132
Issue
1
Start page
191
End page
195
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
June 29, 2012
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