conference paper
Low-frequency noise in pseudomorphically grown In0.52Al0.48As/In0.7Ga0.3As/InP HEMTS as a function of channel thickness
1997
NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE
Low-frequency drain-current noise in pseudomorphic InAlAs/InGaAs/InP HEMTs has been studied at low drain bias as a function of the InGaAs pseudomorphic channel thickness. The 1/f noise at 77 K, quantified through the Kooge's empirical parameter alpha(ch), was found to be strongly dependent on the 2DEG concentration n(s) and correlated to the reciprocal mobility 1/mu. alpha(ch) was found to strongly increase at high channel thicknesses. Noise spectra analysis as a function of temperature reveals two traps with activation energies of 0.33 and 0.39 eV.
Type
conference paper
Author(s)
Date Issued
1997
Published in
NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE
Start page
35
End page
38
Editorial or Peer reviewed
NON-REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
LOUVAIN (LEUWEN), BELGIUM | JUL 14-18, 1997 | |
Available on Infoscience
August 31, 2015
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