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  4. A Physical Analysis of High Voltage MOSFET Capacitance Behaviour
 
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conference paper

A Physical Analysis of High Voltage MOSFET Capacitance Behaviour

Anghel, C.
•
Chauhan, Y. S.  
•
Hefyene, N.
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2005
IEEE International Symposium on Industrial Electronics
  • Details
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Type
conference paper
DOI
10.1109/ISIE.2005.1528963
Author(s)
Anghel, C.
•
Chauhan, Y. S.  
•
Hefyene, N.
•
Ionescu, A. M.  
Date Issued

2005

Published in
IEEE International Symposium on Industrial Electronics
Volume

2

Start page

473

End page

477

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
May 16, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/6926
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