Micro light emitting diodes have been grown by metal organic vapor phase epitaxy on standard GaN and partly relaxed InGaNOS substrates with the purpose of incorporating higher concentrations of indium for identical growth conditions. Green emission has been demonstrated at wavelengths of 500 nm for the GaN template and 525 and 549 nm for the InGaNOS substrates, respectively. The structure, deformation, indium concentration and piezoelectric potentials have been measured with nm-scale spatial resolution in the same specimens by transmission electron microscopy. We show by off-axis electron holography that the piezoelectric potential and information about the indium concentration from the mean inner potential are obtained simultaneously. By separating the components using a model, we show that for higher concentrations of indium in the quantum wells (QWs) grown on InGaNOS substrates, the piezoelectric potentials are reduced. The measurements of the indium concentrations by electron holography have been verified by combining energy dispersive x-ray spectrometry, x-ray diffraction and from the tensile deformation made by precession electron diffraction. A discussion of the limitations of these advanced aberration-corrected transmission electron microscopy techniques when applied to nm-scale QW structures is given.