1GigaRad TID impact on 28 nm HEP analog circuits
An in-depth analysis of modern technologies could represent the base for the success of the High Luminosity Large Hadron Collider experiments. The requirement is a new reliable electronics in 1Grad-TID environments. For the purpose, single devices in TSMC 28 nm bulk CMOS technology have been realized and studied. Preliminary experimental results demonstrate nMOS structures more resistant than pMOS. Nevertheless, the considerable leakage current increment is not negligible because it could affect analog circuits as the pixel readout channel hereby presented. In the particular case, the high radiation level induces a gain reduction and a slowdown of the time response.
WOS:000448094300034
2018-09-01
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13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) / International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Application to Circuit Design (SMACD), ITALY, Jun 12-15, 2017
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