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conference paper
Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots
2005
Physics of Semiconductors
We report here photoluminescence studies of multilayer InAs quantum dot structures grown by MOVPE on (001)-oriented GaAs substrates. AFM measurements reveal prolate shapes of the dots, oriented along the [1-10] direction. Different orientations relative to the interfaces between the GaAs matrix and InAs dots are probed using polarized excitation and detection. We suggest a possible role of local fields in models of the matrix-dot mixtures in the in-plane anisotropic response.
Type
conference paper
Authors
Publication date
2005
Published in
Physics of Semiconductors
ISBN of the book
0-7354-0257-4
Series title/Series vol.
AIP Conference Proceedings; 772
Start page
753
End page
754
Subjects
Peer reviewed
REVIEWED
Written at
OTHER
Event name | Event place | Event date |
Flagstaff, Arizona (USA) | 26-30 July 2004 | |
Available on Infoscience
December 23, 2008
Use this identifier to reference this record