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conference paper

A novel RF MEMS technological platform

Fritschi, R.  
•
Dehollain, C.
•
Declercq, M.  
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2002
Proceedings of the IEEE 28th Annual Conference of the Industrial Electronics Society (IECON 02)
28th Annual Conference of the IEEE Industrial-Electronics-Society

A novel MEMS technological platform for RF passive components, namely RF MEMS switches, tuneable capacitors and high-Q suspended inductors, is reported. The proposed process employs a metal (Al, AlSi or Cu) as active movable layer and amorphous silicon or polycrystalline silicon as sacrificial layers, providing multi-air-gaps. Various types of substrates like bulk silicon and SOI can be used. Full-dry releasing of suspended beams and membranes is performed with SF_6 or XeF_2, with unrivalled yield/reproducibility compared with any other wet etching techniques. The platform is used to validate new MEMS architectures and concepts, such as the suspended-gate MOSFET that can serve as both RF capacitive switches and tuneable RF capacitors.

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