Sem Observations of Zinc Diffusion Induced Disordering in Gaas/Algaas Multiquantum Well Structures
Characterization of impurety diffusion induced disordering in GaAs/AlGaAs multiquantum well structures, grown by molecular beam epitaxy, has been carried out by scanning electron microscopy.
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Ecole polytech fed lausanne,inst interdept microscopie electr,ch-1015 lausanne,switzerland. Ganiere, jd, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: FU051
Cited Reference Count: 5
Cited References:
LAIDIG WD, 1982, J ELECTRON MATER, V11, P1
LAIDIG WD, 1983, J APPL PHYS, V54, P6382
LEE JW, 1984, J ELECTRON MATER, V13, P147
RAO PV, 1985, J INVERTEBR PATHOL, V46, P1
TAN TY, 1987, J APPL PHYS, V61, P1841
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