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  4. 2-μm wavelength range InGa(Al)As/InP-AlGaAs/GaAs wafer fused VCSELs for spectroscopic applications
 
conference paper

2-μm wavelength range InGa(Al)As/InP-AlGaAs/GaAs wafer fused VCSELs for spectroscopic applications

Mereuta, Alexandru  
•
Iakovlev, Vladimir  
•
Caliman, Andrei  
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2008
2008 Ieee 20Th International Conference On Indium Phosphide And Related Materials (Iprm)
20th International Conference on Indium Phosphide and Related Materials

We demonstrate 2-mu m wavelength, wafer-fused InGa(Al)As/InP-AlGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting single-mode power of 0.5 mW at room-temperature with a threshold current of 4mA and side-mode suppression ratio of over 30 dB. Emission wavelength can be continuously tuned with current by similar to 5 nm without mode hopping with a tuning rate of 0.31 nm/mA. These features demonstrate the long wavelength VCSELs potential for gas sensing and other optical spectroscopy applications.

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Type
conference paper
DOI
10.1109/ICIPRM.2008.4702974
Web of Science ID

WOS:000267695700083

Author(s)
Mereuta, Alexandru  
Iakovlev, Vladimir  
Caliman, Andrei  
Syrbu, Alexei
Rudra, Alok  
Kapon, Eli  
Date Issued

2008

Publisher

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa

Published in
2008 Ieee 20Th International Conference On Indium Phosphide And Related Materials (Iprm)
Start page

298

End page

300

Subjects

Vertical surface emitting lasers

•

tunable lasers

•

wafer bonding

•

gas sensing

•

Quantum-Well Lasers

•

Mu-M

•

Power

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
LPN  
Event nameEvent placeEvent date
20th International Conference on Indium Phosphide and Related Materials

Versailles, FRANCE

May 25-29, 2008

Available on Infoscience
November 30, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/60612
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