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conference paper
2-μm wavelength range InGa(Al)As/InP-AlGaAs/GaAs wafer fused VCSELs for spectroscopic applications
2008
2008 Ieee 20Th International Conference On Indium Phosphide And Related Materials (Iprm)
We demonstrate 2-mu m wavelength, wafer-fused InGa(Al)As/InP-AlGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting single-mode power of 0.5 mW at room-temperature with a threshold current of 4mA and side-mode suppression ratio of over 30 dB. Emission wavelength can be continuously tuned with current by similar to 5 nm without mode hopping with a tuning rate of 0.31 nm/mA. These features demonstrate the long wavelength VCSELs potential for gas sensing and other optical spectroscopy applications.
Type
conference paper
Web of Science ID
WOS:000267695700083
Authors
Publication date
2008
Published in
2008 Ieee 20Th International Conference On Indium Phosphide And Related Materials (Iprm)
Start page
298
End page
300
Peer reviewed
NON-REVIEWED
EPFL units
Event name | Event place | Event date |
Versailles, FRANCE | May 25-29, 2008 | |
Available on Infoscience
November 30, 2010
Use this identifier to reference this record