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  4. Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well
 
research article

Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well

Stokker-Cheregi, F.
•
Vinattieri, A.
•
Feltin, E.
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2009
Physical Review B

We report the observation of well-resolved A and B excitonic resonances in the reflectivity spectra of a wedged GaN/AlGaN quantum well (QW) with 5% Al content in the barriers for different well thicknesses. For the thicker well cases, the energy splitting between the A and B excitons is larger than the one found for bulk GaN. However, the A-B exciton energy splitting decreases with decreasing well thickness, accordingly to the delocalization of the electron and hole wave functions in very thin QWs, as supported by theoretical simulations. Moreover, we used time-resolved photoluminescence measurements to investigate the recombination dynamics of the two excitonic states demonstrating the existence of a thermodynamic equilibrium between the two populations at a sample temperature of 10 K.

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Type
research article
DOI
10.1103/PhysRevB.79.245316
Web of Science ID

WOS:000267699700092

Author(s)
Stokker-Cheregi, F.
•
Vinattieri, A.
•
Feltin, E.
•
Simeonov, D.
•
Carlin, J. F.  
•
Butte, R.  
•
Grandjean, N.  
•
Sacconi, F.
•
Povolotskyi, M.
•
Carlo, A.
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Date Issued

2009

Published in
Physical Review B
Volume

79

Issue

24

Article Number

5316

Subjects

aluminium compounds

•

excitons

•

gallium compounds

•

III-V semiconductors

•

photoluminescence

•

reflectivity

•

semiconductor quantum wells

•

thermodynamics

•

time resolved spectra

•

wide band gap semiconductors

•

GAN

•

SEMICONDUCTORS

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Available on Infoscience
October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55134
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