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research article

Room-temperature polariton lasing in semiconductor microcavities

Christopoulos, S.
•
von Hogersthal, G. B. H.
•
Grundy, A. J. D.
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2007
Physical Review Letters

We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of 29 mu J cm(-2), 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of +/- 5 degrees and spatial size around 5 mu m.

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Type
research article
DOI
10.1103/PhysRevLett.98.126405
Web of Science ID

WOS:000245135400043

Author(s)
Christopoulos, S.
•
von Hogersthal, G. B. H.
•
Grundy, A. J. D.
•
Lagoudakis, P. G.
•
Kavokin, A. V.
•
Baumberg, J. J.
•
Christmann, G.
•
Butte, R.  
•
Feltin, E.
•
Carlin, J. F.  
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Date Issued

2007

Published in
Physical Review Letters
Volume

98

Issue

12

Article Number

6405

Subjects

SPONTANEOUS-EMISSION

•

CONTINUOUS-WAVE

•

GAN

•

LASERS

•

EXCITATION

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Available on Infoscience
October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55055
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