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research article
Room-temperature polariton lasing in semiconductor microcavities
We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of 29 mu J cm(-2), 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of +/- 5 degrees and spatial size around 5 mu m.
Type
research article
Web of Science ID
WOS:000245135400043
Author(s)
Christopoulos, S.
•
von Hogersthal, G. B. H.
•
Grundy, A. J. D.
•
Lagoudakis, P. G.
•
Kavokin, A. V.
•
Baumberg, J. J.
•
Christmann, G.
•
•
Feltin, E.
•
Date Issued
2007
Published in
Volume
98
Issue
12
Article Number
6405
Subjects
Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
October 5, 2010
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