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  4. Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process
 
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research article

Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process

Cavalieri, Matteo  
•
O'Connor, Eamon  
•
Gastaldi, Carlotta  
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June 23, 2020
Acs Applied Electronic Materials

In this work, we report an experimental investigation of pulsed laser deposition (PLD) of thin Gd:HfO2 layers at 330 degrees C, which show ferroelectric behavior after annealing at 450 degrees C, compatible with complementary metal-oxide-semiconductor back-end-of-line processing. The material's ferroelectricity is confirmed by microstructural and electrical analysis, corroborated by hysteretic electromechanical response measured via piezoresponse force microscopy. The effect of postdeposition annealing ambient is also studied, where N-2 annealing results in higher remanent polarization, while O-2 annealing yields greater endurance properties. Furthermore, ferroelectricity is demonstrated for PLD thin films formed on a conventional TiN/Si structure, demonstrating the strong potential of this PLD material for cointegration in relevant memory and logic applications.

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Type
research article
DOI
10.1021/acsaelm.0c00319
Web of Science ID

WOS:000543739400031

Author(s)
Cavalieri, Matteo  
•
O'Connor, Eamon  
•
Gastaldi, Carlotta  
•
Stolichnov, Igor  
•
Ionescu, Adrian M.  
Date Issued

2020-06-23

Publisher

AMER CHEMICAL SOC

Published in
Acs Applied Electronic Materials
Volume

2

Issue

6

Start page

1752

End page

1758

Subjects

Engineering, Electrical & Electronic

•

Materials Science, Multidisciplinary

•

Engineering

•

Materials Science

•

ferroelectrics

•

hafnium oxide

•

pulsed laser deposition

•

o-2 and n(2 )annealing

•

low temperature

•

beol compatible

•

films

•

fatigue

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
July 16, 2020
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/170135
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