Density dependence of carrier-carrier-induced intersubband scattering in GaAs/AlxGa1-xAs quantum wells
Photoluminescence lifetimes of the n = 2 level in a large quantum well show a clear nonmonotonic dependence on the density of optically generated carriers. Varying the power density over five orders of magnitude we prove directly the high efficiency of carrier-carrier interaction for intersubband scattering when longitudinal-optical phonon emission is suppressed. For low densities, the observed n = 2 decay times get shorter (from 40 down to 5 ps) as the density is increased. At high densities Pauli blocking reduces significantly the intersubband scattering rates. [S0163-1829(99)06124-X].
WOS:000081551500020
1999
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Swiss Fed Inst Technol, Dept Phys, Inst Micro & Optoelect, EPFL, CH-1015 Lausanne, Switzerland. Ecce, I-42019 Scandino, Italy. Hartig, M, Swiss Fed Inst Technol, Dept Phys, Inst Micro & Optoelect, EPFL, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 218KJ
Cited Reference Count: 18
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