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  4. Two-dimensional "pseudo-donor-acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells
 
research article

Two-dimensional "pseudo-donor-acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells

Morel, A.
•
Lefebvre, P.
•
Taliercio, T.
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2003
Physica E-Low-Dimensional Systems & Nanostructures

Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dynamics of two dimensional "pseudo-donor-acceptor pairs". (C) 2002 Elsevier Science B.V. All rights reserved.

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Type
research article
DOI
10.1016/s1386-9477(02)00762-2
Author(s)
Morel, A.
Lefebvre, P.
Taliercio, T.
Bretagnon, T.
Gil, B.
Grandjean, N.  
Damilano, B.
Massies, J.
Date Issued

2003

Published in
Physica E-Low-Dimensional Systems & Nanostructures
Volume

17

Issue

1-4

Start page

64

End page

67

Subjects

InGaN/GaN quantum wells

•

donor acceptor pairs

•

recombination dynamics

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Available on Infoscience
October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/54999
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