research article
A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI
Type
research article
Web of Science ID
WOS:000427578800008
Author(s)
Giterman, R
Fish, A
Burg, A
Teman, A
Date Issued
2018
Volume
65
Issue
4
Start page
1245
End page
1256
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
November 8, 2018
Use this identifier to reference this record