conference paper
A 4.7μW switched-bias MEMS microphone preamplifier for ultra-low-power voice interfaces
2017
2017 Symposium on VLSI Circuits proceedings
This paper presents a switched-bias MEMS microphone preamplifier for an ultra-low-power voice interface. A switched-MOSFET periodically changes the MOSFET between strong inversion and accumulation to inherently reduce 1/f noise. In addition, a proposed coupling capacitor allows the microphone to benefit from a high bias voltage while the preamp can use a low VDD. The preamp achieves 7.3μVrms input referred noise (A-weighted) with 3.4μA, improving NEF by 4.5×. Acoustic testing with the preamp and MEMS microphone shows 61.3dBA SNR at 94dB SPL.
Type
conference paper
Author(s)
Date Issued
2017
Publisher
Published in
2017 Symposium on VLSI Circuits proceedings
Start page
C314
End page
C315
Editorial or Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
| Event name | Event place | Event date |
Kyoto, Japan | 5-8 June 2017 | |
Available on Infoscience
April 1, 2022
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