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  4. Characterisation of the fatigued state of ferroelectric PZT thin-film capacitors
 
research article

Characterisation of the fatigued state of ferroelectric PZT thin-film capacitors

Colla, E. L.
•
Kholkin, A. L.
•
Taylor, D.
Show more
1995
Microelectronic Engineering

In the present study, piezoelectric, conductivity and dielectric measurements have been performed on virgin and fatigued ferroelectric PZT thin films prepared by spin-on sol-gel deposition process on Si/SiO2/Ti/Pt substrates. By fatiguing, the polarisation shows a strong exponential degradation, the hysteresis loops of the piezoelectric coefficient d(33) become smaller and asymmetric and the polarisation-induced asymmetry of the conductivity at low voltage and the relative permittivity both decrease. The ensemble of these results shows that the fatigued state is produced by the freezing of ferroelectric domains with the preferential orientation from the top to the bottom electrode. However, since the magnitude of the total polarisation after poling in the same direction in the fatigued state is smaller than that observed in the virgin state, it is concluded that part of the frozen polarisation is oriented in the opposite direction.

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Type
research article
DOI
10.1016/0167-9317(95)00133-6
Web of Science ID

WOS:A1995TP60800029

Author(s)
Colla, E. L.
Kholkin, A. L.
Taylor, D.
Tagantsev, A. K.  
Brooks, K. G.
Setter, N.  
Date Issued

1995

Published in
Microelectronic Engineering
Volume

29

Issue

1-4

Start page

145

End page

148

Note

Colla, EL Ecole Polytech Fed Lausanne,Dept Mat,Ceram Lab,Ch-1015 Lausanne,Switzerland

Tp608

Cited References Count:4

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LC  
Available on Infoscience
August 21, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/233258
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