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  4. Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation
 
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research article

Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation

Bretagnon, T.
•
Kalliakos, S.
•
Lefebvre, P.
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2003
Physical Review B

The time dependence of the photoluminescence of GaN/AlN quantum dots (QD's) after high photoexcitation is examined on a large time scale. A continuous change in energy peak is reported, resulting in a giant energy shift of more than 1 eV after delays of several hundreds of microseconds. Simultaneously, the intensity decreases over more than seven orders of magnitude with a complex dynamics. These results are explained by the screening of the internal electric field due to the accumulation of electron-hole pairs in the dots. The dynamics can be qualitatively described by considering the change of the squared overlap integral and the effect of the number of the electron-hole pairs in the QD itself on the radiative lifetime.

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Type
research article
DOI
10.1103/PhysRevB.68.205301
Author(s)
Bretagnon, T.
•
Kalliakos, S.
•
Lefebvre, P.
•
Valvin, P.
•
Gil, B.
•
Grandjean, N.  
•
Dussaigne, A.  
•
Damilano, B.
•
Massies, J.
Date Issued

2003

Published in
Physical Review B
Volume

68

Issue

20

Article Number

5301

Subjects

OPTICAL-PROPERTIES

•

LIGHT-EMISSION

•

WELLS

•

POLARIZATION

•

EXCITONS

•

LIFETIME

•

FIELDS

Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Available on Infoscience
October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/54987
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