Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation
In situ cathodoluminescence experiments have been performed to follow the time dependence of the UV luminescence in epitaxial lateral overgrowth GaN specimens. The decrease of the observed intensity and red-shift of the UV peak are interpreted in terms of non-radiative defect introduction and diffusion. This leads to strain relaxation of the GaN epilayer, which is initially under compressive strain. Monochromatic UV and yellow CL images show that dislocations act as efficient non-radiative recombination centres, that they are not at the origin of the yellow band and that they do not move under the electron beam.
WOS:000166039400029
2000
12
49
10271
10278
Univ Lille, Lab Struct & Prop Etat Solide, F-59655 Villeneuve Dascq, France. CNRS, CRHEA, F-06560 Valbonne, France. EPFL, IMO, CH-1015 Lausanne, Switzerland. Sieber, B, Univ Lille, Lab Struct & Prop Etat Solide, ESA 8008,Batiment C6, F-59655 Villeneuve Dascq, France.
ISI Document Delivery No.: 386BC
Cited Reference Count: 14
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