Differential Photoluminescence Excitation Spectroscopy - a Novel and Sensitive Tool to Probe Gain and Absorption in Semiconductor Nanostructures
Differential photoluminescence excitation (DPLE) spectroscopy is shown to be an efficient way to measure gain and absorption spectra of excited semiconductors. Very small excited volumes can be probed, and thus DPLE spectroscopy is ideal to probe nanostructures. This technique is applied to investigate the width of the gap between the second electron and hole subbands of a quantum Well versus carrier density, in a sample which contains only a few wellS. It is found that the reduction of this gap is a smooth function of the electron hole pair- density, and no drastic change occurs when the second subbands start to be populated.
WOS:A1992JR28400034
1992
173
1
355
363
Ecole polytech fed lausanne,inst phys appl,ph ecublens,ch-1015 lausanne,switzerland. Bongiovanni, g, univ cagliari,dipartimento sci fis,via osped 72,i-09124 cagliari,italy.
ISI Document Delivery No.: JR284
Cited Reference Count: 15
Cited References:
ANDREANI LC, 1989, SUPERLATTICE MICROST, V5, P59
ANDREANI LC, 1990, PHYS REV B, V42, P8928
BAUER GEW, 1988, 19TH P INT C PHYS SE
BONGIOVANNI G, IN PRESS SOLID STATE
BONGIOVANNI G, 1991, SOLID STATE COMMUN, V80, P473
DASSARMA S, 1990, PHYS REV B, V41, P3561
HAUG H, 1984, PROG QUANT ELECTRON, V9, P3
KOTELES ES, 1988, PHYS REV B, V37, P6332
KULAKOVSKII VD, 1989, PHYS REV B, V40, P8087
LEVENSON JA, 1988, PHYS REV B, V38, P13443
SANDERS GD, 1987, PHYS REV B, V35, R1300
SCHLAAD KH, 1991, PHYS REV B, V43, P4268
TRANKLE G, 1987, PHYS REV LETT, V58, P419
WEBER C, 1988, PHYS REV B, V38, P12748
ZIMMERMANN R, UNPUB
REVIEWED