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research article

Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide

Vitale, Wolfgang Amadeus  
•
Moldovan, Clara Fausta  
•
Paone, Antonio  
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2015
Microelectronic Engineering

Vanadium dioxide thin films were deposited on amorphous SiO2-coated Si substrates, by reactive magnetron sputtering at 490 °C of a pure vanadium target. The deposition parameters were optimized in order to maximize the resistivity modulation due to the metal–insulator transition. The best results were obtained working at an operating pressure of 2 · 10−3 mbar, a constant argon flow of 12.5 sccm and a starting oxygen flow of 2.41 sccm with a feedback control to keep constant the oxygen partial pressure in the sputtering chamber. This allowed to observe for the first time an electrically induced metal–insulator transition with a resistance ratio as high as 824.8 for sputtered VO2 on SiO2/Si substrates.

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Type
research article
DOI
10.1016/j.mee.2015.03.055
Web of Science ID

WOS:000362152200023

Author(s)
Vitale, Wolfgang Amadeus  
•
Moldovan, Clara Fausta  
•
Paone, Antonio  
•
Schüler, Andreas
•
Ionescu, Adrian Mihai  
Date Issued

2015

Publisher

Elsevier

Published in
Microelectronic Engineering
Volume

145

Start page

117

End page

119

Subjects

vanadium dioxide

•

metal-insulator transition

•

sputtering

•

abrupt switching

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LESO-PB  
NANOLAB  
Available on Infoscience
July 16, 2015
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/116304
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