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  4. Schottky-Barrier Formation on Amorphous-Semiconductors - Au on Ge(111), a-Ge, and Hydrogenated a-Ge
 
research article

Schottky-Barrier Formation on Amorphous-Semiconductors - Au on Ge(111), a-Ge, and Hydrogenated a-Ge

Quaresima, C.
•
Perfetti, P.
•
Daniels, R. R.
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1984
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films
  • Details
  • Metrics
Type
research article
DOI
10.1116/1.572612
Author(s)
Quaresima, C.
Perfetti, P.
Daniels, R. R.
Margaritondo, G.  
Date Issued

1984

Published in
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films
Volume

2

Issue

2

Start page

524

End page

526

Note

Univ wisconsin,dept phys,madison,wi 53706. Quaresima, c, ist nazl fis nucl,nazl struttura mat grp,puls,nazl lab,frascati,italy.

ISI Document Delivery No.: SS703

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSE  
LPRX  
Available on Infoscience
October 3, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/234355
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