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  4. Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
 
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conference paper

Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

Moselund, K. E.  
•
Dobrosz, P.
•
Olsen, S.
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2007
2007 Ieee International Electron Devices Meeting
IEEE International Electron Devices Meeting

In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200MPa to 2GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.

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Type
conference paper
DOI
10.1109/IEDM.2007.4418899
Web of Science ID

WOS:000259347800041

Author(s)
Moselund, K. E.  
•
Dobrosz, P.
•
Olsen, S.
•
Pott, V.  
•
De Michielis, L.  
•
Tsamados, D.
•
Bouvet, D.  
•
O'Neill, A.
•
Ionescu, A. M.  
Date Issued

2007

Publisher

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa

Published in
2007 Ieee International Electron Devices Meeting
ISBN of the book

978-1-4244-1507-6

Start page

191

End page

194

Subjects

Inversion

Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Event nameEvent placeEvent date
IEEE International Electron Devices Meeting

Washington, DC

Dec 10-12, 2007

Available on Infoscience
July 4, 2012
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/83534
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