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conference paper
Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
2007
2007 Ieee International Electron Devices Meeting
In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200MPa to 2GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.
Type
conference paper
Web of Science ID
WOS:000259347800041
Author(s)
•
Dobrosz, P.
•
Olsen, S.
•
•
•
Tsamados, D.
•
•
O'Neill, A.
•
Date Issued
2007
Published in
2007 Ieee International Electron Devices Meeting
ISBN of the book
978-1-4244-1507-6
Start page
191
End page
194
Subjects
Peer reviewed
NON-REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Washington, DC | Dec 10-12, 2007 | |
Available on Infoscience
July 4, 2012
Use this identifier to reference this record