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  4. SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits
 
research article

SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits

Han, Hung-Chi  
•
D'Amico, Antonio  
•
Enz, Christian  
January 1, 2022
Ieee Open Journal Of Circuits And Systems

This paper presents the open-source Python-based parameter extractor (SEKV-E) for the simplified EKV (sEKV) model, which enables the modern low-power circuit designs with the inversion coefficient design methodology. The tool extracts the essential sEKV parameters automatically from the given I-V curves using the direct extraction and the multi-stage optimization process. It also handles the overfitting issue because of non-linear least squares. Moreover, this work demonstrates the SEKV-E as a universal tool by widely applying it to different silicon technologies, temperatures, dimensions, and back-gate voltages.

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Type
research article
DOI
10.1109/OJCAS.2022.3179046
Web of Science ID

WOS:000856100000002

Author(s)
Han, Hung-Chi  
D'Amico, Antonio  
Enz, Christian  
Date Issued

2022-01-01

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Published in
Ieee Open Journal Of Circuits And Systems
Volume

3

Start page

162

End page

167

Subjects

Engineering, Electrical & Electronic

•

Engineering

•

bulk mosfet

•

charge-based model

•

cryogenic

•

fdsoi

•

finfet

•

inversion coefficient

•

ic design

•

low power

•

simplified ekv

•

cmos technology

•

compact model

•

leti-utsoi2.1

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

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October 10, 2022
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/191303
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