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Nitride-based electron devices for high-power/high-frequency applications

Cordier, Yvon
•
Fujishima, Tatsuya
•
Lu, Bin
Show more
Gil, Bernard
2013
III-Nitride Semiconductors and their Modern Devices

Progress in the development of III-nitride materials has made possible the fabrication of many different types of electron devices. This chapter describes the main advantages of GaN-based electronics as well as some of the main electronic devices developed with this material system. We introduce the key material properties and figures of merit that make III-nitride materials ideal for many high-power/high-frequency applications. Then we focus on the different GaN diode structures developed so far, before discussing GaN bipolar transistors. Finally, we review the state of the art regarding field-effect transistors, both lateral and vertical.

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  • Metrics
Type
book part or chapter
DOI
10.1093/acprof:oso/9780199681723.001.0001
Author(s)
Cordier, Yvon
Fujishima, Tatsuya
Lu, Bin
Matioli, Elison  
Palacios, Tomas
Editors
Gil, Bernard
Date Issued

2013

Publisher

Oxford University Press

Published in
III-Nitride Semiconductors and their Modern Devices
ISBN of the book

978-0-19968-172-3

Subjects

transistors

•

diodes

•

heterostructures

•

bipolar junctions

•

Schottky junction

•

metal-oxide-semiconductor junction

Written at

OTHER

EPFL units
POWERLAB  
Available on Infoscience
May 6, 2016
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/126051
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